JPS6323669B2 - - Google Patents

Info

Publication number
JPS6323669B2
JPS6323669B2 JP57214781A JP21478182A JPS6323669B2 JP S6323669 B2 JPS6323669 B2 JP S6323669B2 JP 57214781 A JP57214781 A JP 57214781A JP 21478182 A JP21478182 A JP 21478182A JP S6323669 B2 JPS6323669 B2 JP S6323669B2
Authority
JP
Japan
Prior art keywords
substrate
region
mesa
mesa region
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57214781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58173870A (ja
Inventor
Neruson Jakuson Toomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58173870A publication Critical patent/JPS58173870A/ja
Publication of JPS6323669B2 publication Critical patent/JPS6323669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57214781A 1982-04-05 1982-12-09 半導体装置の製造方法 Granted JPS58173870A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36580682A 1982-04-05 1982-04-05
US365806 1982-04-05

Publications (2)

Publication Number Publication Date
JPS58173870A JPS58173870A (ja) 1983-10-12
JPS6323669B2 true JPS6323669B2 (en]) 1988-05-17

Family

ID=23440447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57214781A Granted JPS58173870A (ja) 1982-04-05 1982-12-09 半導体装置の製造方法

Country Status (3)

Country Link
EP (1) EP0091548B1 (en])
JP (1) JPS58173870A (en])
DE (1) DE3380863D1 (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4648173A (en) * 1985-05-28 1987-03-10 International Business Machines Corporation Fabrication of stud-defined integrated circuit structure
DE3602461A1 (de) * 1986-01-28 1987-07-30 Telefunken Electronic Gmbh Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
US5283456A (en) * 1992-06-17 1994-02-01 International Business Machines Corporation Vertical gate transistor with low temperature epitaxial channel
JP3489728B2 (ja) * 1999-10-18 2004-01-26 株式会社村田製作所 積層コンデンサ、配線基板および高周波回路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor
JPS5343483A (en) * 1976-10-01 1978-04-19 Handotai Kenkyu Shinkokai Semiconductor device
JPS5384570A (en) * 1976-12-29 1978-07-26 Fujitsu Ltd Field effect semiconductor device and its manufacture
US4262296A (en) * 1979-07-27 1981-04-14 General Electric Company Vertical field effect transistor with improved gate and channel structure
GB2064868B (en) * 1979-12-10 1983-12-14 Sumitomo Electric Industries Schottry barrier gate field-effect transistor
US4333965A (en) * 1980-09-15 1982-06-08 General Electric Company Method of making integrated circuits
FR2493604A1 (fr) * 1980-10-31 1982-05-07 Thomson Csf Transistors a effet de champ a grille ultra courte

Also Published As

Publication number Publication date
JPS58173870A (ja) 1983-10-12
DE3380863D1 (en) 1989-12-21
EP0091548A2 (en) 1983-10-19
EP0091548A3 (en) 1986-02-12
EP0091548B1 (en) 1989-11-15

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